Vertical-cavity surface-emitting laser

== History ==

== History ==

The surface emission from a bulk semiconductor at ultra-low temperature and magnetic carrier confinement was reported by Ivars Melngailis in 1965.{{cite book | author=Eli Kapon | title=Semiconductor Lasers II: Materials and Structures | year=1998 | publisher=Elsevier | isbn=9780080516967}}{{cite book | author=Shun Lien Chuang | title=Physics of Photonic Devices | year=2009}}{{cite book | author=J.K. Peterson | title= Fiber Optics Illustrated Dictionary | year=2002 | publisher= Taylor & Francis | isbn=9780849313493}} The first proposal of short [[optical cavity|cavity]] VCSEL was done by Kenichi Iga of Tokyo Institute of Technology in 1977. A simple drawing of his idea is shown in his research note. Contrary to the conventional Fabry-Perot edge-emitting semiconductor lasers, his invention comprises a short laser cavity less than 1/10 of the edge-emitting lasers vertical to a wafer surface. In 1979, a first demonstration on a short cavity VCSEL was done by Soda, Iga, Kitahara and [[Yasuharu Suematsu|Suematsu]],{{cite journal |last=Soda |first=Haruhisa |title=GaInAsP/InP Surface Emitting Injection Lasers |journal=Japanese Journal of Applied Physics |volume=18 |issue=12 |year=1979 |pages=2329–2330 |doi= 10.1143/JJAP.18.2329|bibcode = 1979JaJAP..18.2329S |s2cid=122958383 |display-authors=etal}} but devices for [[Continuous Wave|CW]] operation at room temperature were not reported until 1988.{{cite journal |last=Koyama |first=Fumio |title=Room temperature cw operation of GaAs vertical cavity surface emitting laser |journal=Trans. IEICE |volume= E71 |issue=11 |year=1988 |pages=1089–1090|display-authors=etal}} The term VCSEL was coined in a publication of the [[Optical Society of America]] in 1987.{{cite journal |last1=Christensen |first1=D. H. |last2=Barnes |first2=F. S. |title=Vertical Cavity Surface Emitting Laser in Molecular Beam Epitaxial GaAs/AlGaAs using a Multilayer Dielectric Mirror |journal=Topical Meeting on Semiconductor Lasers, Technical Digest |publisher=Optical Society of America |date=February 1987 |volume=6 |page=WA7-1 |doi=10.1364/SLA.1987.WA7 | isbn=0-936659-39-4|s2cid=257137192 }} In 1989, Jack Jewell led a Bell Labs / Bellcore collaboration (including [[Axel Scherer (professor)|Axel Scherer]], Sam McCall, Yong Hee Lee and James Harbison) that demonstrated over 1 million VCSELs on a small chip.{{Cite journal|last1=Jewell|first1=J.L.|last2=Scherer|first2=A.|last3=McCall|first3=S.L.|last4=Lee|first4=Y.H.|last5=Walker|first5=S.|last6=Harbison|first6=J.P.|last7=Florez|first7=L.T.|date=August 1989|title=Low-threshold electrically pumped vertical-cavity surface-emitting microlasers|journal=Electronics Letters|volume=25|issue=17|pages=1123–1124|doi=10.1049/el:19890754|bibcode=1989ElL....25.1123J|s2cid=111035374 }}{{Cite journal|last1=Lee|first1=Y.H.|last2=Jewell|first2=J.L.|last3=Scherer|first3=A.|last4=McCall|first4=S.L.|last5=Harbison|first5=J.P.|last6=Florez|first6=L.T.|date=September 1989|title=Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes|url=https://authors.library.caltech.edu/452/1/LEEel89.pdf|journal=Electronics Letters|volume=25|issue=20|pages=1377–1378|doi=10.1049/el:19890921|bibcode=1989ElL....25.1377L }} These first all-semiconductor VCSELs introduced other design features still used in all commercial VCSELs. "This demonstration marked a turning point in the development of the surface-emitting laser. Several more research groups entered the field, and many important innovations were soon being reported from all over the world".{{Cite journal|last1=Towe|first1=Elias|last2=Leheny|first2=Robert F.|last3=Yang|first3=Andrew|date=December 2000|title=A historical perspective of the development of the vertical-cavity surface-emitting laser|journal=IEEE Journal of Selected Topics in Quantum Electronics|volume=6|issue=6|pages=1458–1464|doi=10.1109/2944.902201|bibcode=2000IJSTQ...6.1458T|s2cid=46544782 }} Andrew Yang of the Defense Advanced Research Projects Agency (DARPA) quickly initiated significant funding toward VCSEL R&D, followed by other government and industrial funding efforts. VCSELs replaced edge-emitting lasers in applications for short-range fiberoptic communication such as [[Gigabit Ethernet]] and [[Fibre Channel]], and are now used for link bandwidths from 1 to 400 gigabits per second or greater.

The surface emission from a bulk semiconductor at ultra-low temperature and magnetic carrier confinement was reported by Ivars Melngailis in 1965.{{cite book | author=Eli Kapon | title=Semiconductor Lasers II: Materials and Structures | year=1998 | publisher=Elsevier | isbn=9780080516967}}{{cite book | author=Shun Lien Chuang | title=Physics of Photonic Devices | year=2009}}{{cite book | author=J.K. Peterson | title= Fiber Optics Illustrated Dictionary | year=2002 | publisher= Taylor & Francis | isbn=9780849313493}} The first proposal of short [[optical cavity|cavity]] VCSEL was done by Kenichi Iga of Tokyo Institute of Technology in 1977.{{Cite journal |last1=Iga |first1=K. |last2=Koyama |first2=F. |last3=Kinoshita |first3=S. |date=September 1988 |title=Surface emitting semiconductor lasers |journal=IEEE Journal of Quantum Electronics |volume=24 |issue=9 |pages=1845-1855 |doi=10.1109/3.7126 |bibcode=1988IJQE...24.1845I }} A simple drawing of his idea is shown in his research note. Contrary to the conventional Fabry-Perot edge-emitting semiconductor lasers, his invention comprises a short laser cavity less than 1/10 of the edge-emitting lasers vertical to a wafer surface. In 1979, a first demonstration on a short cavity VCSEL was done by Soda, Iga, Kitahara and [[Yasuharu Suematsu|Suematsu]],{{cite journal |last=Soda |first=Haruhisa |title=GaInAsP/InP Surface Emitting Injection Lasers |journal=Japanese Journal of Applied Physics |volume=18 |issue=12 |year=1979 |pages=2329–2330 |doi= 10.1143/JJAP.18.2329|bibcode = 1979JaJAP..18.2329S |s2cid=122958383 |display-authors=etal}} but devices for [[Continuous Wave|CW]] operation at room temperature were not reported until 1988.{{cite journal |last=Koyama |first=Fumio |title=Room temperature cw operation of GaAs vertical cavity surface emitting laser |journal=Trans. IEICE |volume= E71 |issue=11 |year=1988 |pages=1089–1090|display-authors=etal}} The term VCSEL was coined in a publication of the [[Optical Society of America]] in 1987.{{cite journal |last1=Christensen |first1=D. H. |last2=Barnes |first2=F. S. |title=Vertical Cavity Surface Emitting Laser in Molecular Beam Epitaxial GaAs/AlGaAs using a Multilayer Dielectric Mirror |journal=Topical Meeting on Semiconductor Lasers, Technical Digest |publisher=Optical Society of America |date=February 1987 |volume=6 |page=WA7-1 |doi=10.1364/SLA.1987.WA7 | isbn=0-936659-39-4|s2cid=257137192 }} In 1989, Jack Jewell led a Bell Labs / Bellcore collaboration (including [[Axel Scherer (professor)|Axel Scherer]], Sam McCall, Yong Hee Lee and James Harbison) that demonstrated over 1 million VCSELs on a small chip.{{Cite journal|last1=Jewell|first1=J.L.|last2=Scherer|first2=A.|last3=McCall|first3=S.L.|last4=Lee|first4=Y.H.|last5=Walker|first5=S.|last6=Harbison|first6=J.P.|last7=Florez|first7=L.T.|date=August 1989|title=Low-threshold electrically pumped vertical-cavity surface-emitting microlasers|journal=Electronics Letters|volume=25|issue=17|pages=1123–1124|doi=10.1049/el:19890754|bibcode=1989ElL....25.1123J|s2cid=111035374 }}{{Cite journal|last1=Lee|first1=Y.H.|last2=Jewell|first2=J.L.|last3=Scherer|first3=A.|last4=McCall|first4=S.L.|last5=Harbison|first5=J.P.|last6=Florez|first6=L.T.|date=September 1989|title=Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes|url=https://authors.library.caltech.edu/452/1/LEEel89.pdf|journal=Electronics Letters|volume=25|issue=20|pages=1377–1378|doi=10.1049/el:19890921|bibcode=1989ElL....25.1377L }} These first all-semiconductor VCSELs introduced other design features still used in all commercial VCSELs. "This demonstration marked a turning point in the development of the surface-emitting laser. Several more research groups entered the field, and many important innovations were soon being reported from all over the world".{{Cite journal|last1=Towe|first1=Elias|last2=Leheny|first2=Robert F.|last3=Yang|first3=Andrew|date=December 2000|title=A historical perspective of the development of the vertical-cavity surface-emitting laser|journal=IEEE Journal of Selected Topics in Quantum Electronics|volume=6|issue=6|pages=1458–1464|doi=10.1109/2944.902201|bibcode=2000IJSTQ...6.1458T|s2cid=46544782 }} Andrew Yang of the Defense Advanced Research Projects Agency (DARPA) quickly initiated significant funding toward VCSEL R&D, followed by other government and industrial funding efforts. VCSELs replaced edge-emitting lasers in applications for short-range fiberoptic communication such as [[Gigabit Ethernet]] and [[Fibre Channel]], and are now used for link bandwidths from 1 to 400 gigabits per second or greater.

== See also ==

== See also ==